Published April 15, 1996
| Version v1
Journal article
Ba3Ga2N4
Creators
- 1. Cornell Univ., Ithaca, NY (United States). Dept. of Chemistry
Description
The crystal structure of tribarium digallium tetranitride is based on a distorted cubic close packing of N atoms with three-quarters of the octahedral holes occupied by Ba atoms and one-quarter of the tetrahedral holes occupied by Ga atoms. The GaN4 tetrahedra share edges and form [GaN3-4/2] chains, which are isosteric to the edge-sharing SiS2 tetrahedra in the SiS2 structure. (orig.)
Additional details
Publishing Information
- Journal Title
- Acta Crystallographica. Section C: Crystal Structure Communications
- Journal Volume
- 52
- Journal Issue
- 4
- Journal Page Range
- p. 760-761.
- ISSN
- 0108-2701
- CODEN
- ACSCEE
INIS
- Country of Publication
- Denmark
- Country of Input or Organization
- Denmark
- INIS RN
- 27059092
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BARIUM NITRIDES; BOND LENGTHS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; GALLIUM NITRIDES; SPACE GROUPS; X-RAY DIFFRACTION
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; COHERENT SCATTERING; DIFFRACTION; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SCATTERING; SYMMETRY GROUPS