Published September 1983
| Version v1
Journal article
High energy ion scattering and its application
Description
This article reviews the principle, techniques, and applications of high energy ion scattering (HEIS) to surface physics. Particular emphasis is given to computer simulation of the nuclear encounter process between high energy(--MeV) He ions and target surface atoms. This simulation is mandatory for deriving any quantitative conclusions from experimental measurements. At the same time, it is most useful to comprehend the nature of HEIS and how to use it. Also discussed are possible applications of HEIS to compound semiconductor problems, some of which are under consideration in our Optoelectronics Joint Research Laboratory. (author)
Additional details
Publishing Information
- Journal Title
- Hyomen Kagaku
- Journal Volume
- 4
- Journal Issue
- 3
- Series
- Hyomen Kagaku.
- Journal Page Range
- 157-164
- ISSN
- 0388-5321
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 16000428
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COMPUTER CALCULATIONS; ENERGY DEPENDENCE; GALLIUM ARSENIDES; HELIUM IONS; MEASURING METHODS; MONOCRYSTALS; RUTHERFORD SCATTERING; SIMULATION; SURFACES; TARGETS; USES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; CRYSTALS; ELASTIC SCATTERING; GALLIUM COMPOUNDS; IONS; SCATTERING