Published 1998
| Version v1
Journal article
Quasiballistic transport in gate voltage-controlled Nb/InAs(2DEG)/Nb weak links
- 1. Hamburg Univ. (Germany). Zentrum fuer Mikrostrukturforschung
- 2. Hamburg Univ. (Germany). Inst. fuer Angewandte Physik
Description
no abstract available
Additional details
Additional titles
- Original title (German)
- Quasiballistischer Transport in gatespannungskontrollierten Nb/InAs(2DEG)/Nb weak links
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Volume
- 33
- Journal Issue
- 5
- Journal Page Range
- p. 962
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- 62. physicists' meeting of the Deutsche Physikalische Gesellschaft e.V. (DPG); meeting of Arbeitskreis Festkoerperphysik (AKF) with physics and book exhibition
- Original Conference Title
- 62. Physikertagung der Deutschen Physikalischen Gesellschaft e.V. (DPG) und Tagung des Arbeitskreises Festkoerperphysik (AKF) mit Physik- und Buchausstellung
- Dates
- 23-27 Mar 1998
- Place
- Regensburg (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 30019136
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- ARSENIC ALLOYS; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; INDIUM ALLOYS; MAGNETIC FIELDS; MICROSTRUCTURE; NIOBIUM; RESONANCE
- Descriptors DEC
- ALLOYS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; METALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; TRANSISTORS; TRANSITION ELEMENTS