Published 2005
| Version v1
Journal article
Facet and layer formation of II-VI semiconductors on GaSe van der Waals terminated Si(111)
- 1. Darmstadt Univ. of Technology, Dept. of Materials Science, Darmstadt (Germany)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Volume
- 40
- Journal Issue
- 2
- Journal Page Range
- p. 527
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- Physics since Albert Einstein
- Original Conference Title
- Jahrestagung 2005 der Deutschen Physikalischen Gesellschaft (DPG) im World Year of Physics: Physik seit Albert Einstein
- Acronym
- 2005 annual conference of the German Physical Society (DPG) during the World year of physics
- Dates
- 4-9 Mar 2005
- Place
- Berlin (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 36057165
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; CADMIUM SELENIDES; CADMIUM SULFIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRON DIFFRACTION; FILMS; GALLIUM SELENIDES; LAYERS; MORPHOLOGY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SOLID CLUSTERS; SUBSTRATES; SURFACE PROPERTIES; SURFACES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; ZINC SELENIDES; ZINC SULFIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; GALLIUM COMPOUNDS; HEAT TREATMENTS; INORGANIC PHOSPHORS; MATERIALS; MICROSCOPY; PHOSPHORS; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SEMIMETALS; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE; ZINC COMPOUNDS