Published 1994 | Version v1
Book Metadata-only

Crystallization of amorphous silicon carbonitride investigated by transmission electron microscopy (TEM)

Creators

  • 1. Max-Planck-Inst. fuer Metallforschung, Inst. fuer Werkstoffwissenschaft, Pulvermetallurgisches Lab., Stuttgart (Germany)
  • 2. Max-Planck-Inst. fuer Metallforschung, Inst. fuer Werkstoffwissenschaft, Stuttgart (Germany)
  • 3. TH Darmstadt, Fachbereich Materialwissenschaft, Fachgebiet Disperse Feststoffe (Germany)

Description

The crystallization behaviour of amorphous silicon carbonitride Si3+xN4Cx+y which can be easily obtained by the pyrolysis of a polysilazane in Ar-atmosphere was investigated by means of X-ray diffraction and TEM. Applying elemental spectroscopic imaging (ESI) the distribution of the elements Si, C and N can be mapped down to a resolution of 2 nm. Even after a hold of 50 h in N2-atmosphere at 1050 C these elements are distributed homogeneously suggesting a randomly distributed network of Si, C and N. At temperatures exceeding 1300 C in nitrogen after a hold of 50 h phase separation of the amorphous Si3+xN4Cx+y into amorphous C and Si3+xN4Cx+y-z is observed. Crystallization of α-Si3N4 starts at 1400 C while crystalline SiC can be detected at 1500 C for the first time yielding a micro/nanocomposite microstructure of α-Si3N4/SiC. (orig.)

Part of:
Silicon nitride 93

Additional details

Publishing Information

Publisher
Trans Tech Publ.
Imprint Place
Aedermannsdorf (Switzerland)
ISBN
0-87849-668-8
Imprint Title
Silicon nitride 93
Imprint Pagination
782 p.
Journal Volume
89-91
Series
Key Engineering Materials.
Journal Page Range
p. 95-100.
ISSN
1013-9826
CODEN
KEMAEY

Conference

Title
International conference on silicon nitride-based ceramics.
Dates
4-6 Oct 1993.
Place
Stuttgart (Germany).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
25057749
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; BULK DENSITY; CARBONITRIDES; CRYSTALLIZATION; LINE BROADENING; MICROSTRUCTURE; NITROGEN; PYROLYSIS; SHRINKAGE; SILICON CARBIDES; SILICON COMPOUNDS; SILICON NITRIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; CHEMICAL REACTIONS; COHERENT SCATTERING; CRYSTAL STRUCTURE; DECOMPOSITION; DENSITY; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; TEMPERATURE RANGE

Optional Information