Published September 1999 | Version v1
Journal article

Electric field gradients of acceptor-donor pairs in semiconductors

  • 1. Universitaet Konstanz, Fakultaet fuer Physik (Germany)
  • 2. Institute of Spectroscopy (Russian Federation)
  • 3. CERN (Switzerland)
  • 4. Universitaet des Saarlandes, Technische Physik (Germany) and CERN (Switzerland)

Description

The interaction between substitutional and interstitial donors and single or double acceptors in Si, GaAs, InP, and InAs has been studied by perturbed angular correlation spectroscopy (PAC). For the case of Si, complex formation between substitutional donors (As, P) and different radioactive acceptors (111In, 111Cd, 117Cd) has been observed. The formation of Cd-hydrogen pairs using either 111Cd or 117Cd is discussed for GaAs, InP, and InAs

Additional details

Identifiers

Publishing Information

Journal Title
Hyperfine Interactions
Journal Volume
120-121
Journal Issue
1-8
Journal Page Range
p. 389-395
ISSN
0304-3843
CODEN
HYINDN

Conference

Title
11. international conference on hyperfine interactions
Dates
23-28 Aug 1998
Place
Durban (South Africa)

Optional Information

Copyright
Copyright (c) 1999 Kluwer Academic Publishers