Diluted magnetic semiconductors based on Mn-doped In₂O₃ nanoparticles

Highlights: • In₂O₃ and Mn(III)-doped In₂O₃ NPs were obtained by a novel synthesis pathway. • This method is suitable for large-scale synthesis of oxides semiconductors NPs. • The PL and the paramagnetic behavior are owing to the formation of many defects. - Abstract: Here we report a novel pathway for the synthesis of Indium oxide and Mn(III)-doped indium oxide nanoparticles (NPs) from mechanochemical activation in absence of basic medium. Nps ∼8 nm were obtained after annealing the powder precursor in air at 400 °C for 1 h. X-ray diffraction (XRD) analysis and high resolution transmission electron microscopy (HR-TEM) reveal that the Nps are single-phase cubic structure of In₂O₃. Fourier transform infrared spectroscopy (FTIR), Raman, and ultraviolet–visible (UV–vis) spectra suggest the In(III) substitution by Mn(III). Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectra show clear evidence of paramagnetic centers as oxygen and indium defects. This synthesis pathway is particularly suitable for large-scale and high-quality of semiconductor metallic oxide nanoparticles production due to its simple process and low cost