Published November 2022 | Version v1
Journal article

Improved solubility in metavalently bonded solid leads to band alignment, ultralow thermal conductivity, and high thermoelectric performance in SnTe

  • 1. MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials TechnologySchool of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094 (China)
  • 2. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031 (China)
  • 3. Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601 (China)
  • 4. State Key Laboratory of Materials‐Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009 (China)
  • 5. Institute of Physics, RWTH Aachen University, Aachen, 52056 (Germany)
  • 6. Advanced Research Institute of Multidisciplinary Sciences, Qufu Normal University Qufu, Shandong, 273165 (China)
  • 7. Peter Grünberg Institute - JARA‐Institute Energy‐Efficient Information Technology (PGI‐10), Forschungszentrum Jülich GmbH, Jülich, 52428 (Germany)

Description

SnTe is an emerging Pb-free thermoelectric compound that has drawn significant attention for clean energy conversion. Chemical doping is routinely used to tailor its charge carrier concentration and electronic band structures. However, the efficacy of dopants is often limited by their small solubility. For example, only 0.5% Ag can be incorporated into the SnTe matrix. Yet, significantly more Ag (>7%) can be dissolved if SnTe is alloyed with AgSbTe2. This large enhancement of solubility can be understood from a chemical bonding perspective. Both SnTe and AgSbTe2 employ metavalent bonding as identified by an unusual bond-rupture in atom probe tomography. Density functional theory calculations show that upon Ag doping the energy offset of the upmost two valence bands decreases significantly. This induces band alignment in SnTe, which results in an enhanced power factor over a broad temperature range. Moreover, the increased concentration of point defects and associated lattice strain lead to strong phonon scattering and softening, contributing to an extremely low κL of 0.30 Wm1K1. These synergistic effects contribute to a peak ZT of 1.8 at 873 K and a record-high average ZT of ≈1.0 between 400 and 873 K in Sn0.87Mn0.08Sb0.08Te-5%AgSbTe2 alloy. (© 2022 The Authors. Advanced Functional Materials published by Wiley‐VCH GmbH)

Availability note (English)

Available from: http://dx.doi.org/10.1002/adfm.202209980

Additional details

Identifiers

Publishing Information

Journal Title
Advanced Functional Materials (Internet)
Journal Volume
32
Journal Issue
47
Journal Page Range
p. 1-11
ISSN
1616-3028
CODEN
AFMDC6

Optional Information

Notes
AID: 2209980