Published February 1977
| Version v1
Journal article
Thin epitaxial silicon for dE/dx detectors
- 1. Los Alamos Scientific Lab., NM
Description
The techniques for fabricating thin self-supporting epitaxial films for dE/dx detectors have been studied. Detectors having thicknesses between 1 and 4 μm with areas of 12.5 mm2 have been fabricated and tested. The response of the detectors has been studied with alpha particles, oxygen ions, and fission fragments
Additional details
Identifiers
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 24
- Journal Issue
- 1
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 104-108
- ISSN
- 0018-9499
Conference
- Title
- 23. nuclear science symposium.
- Dates
- 20 Oct 1976.
- Place
- New Orleans, LA, USA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 8344076
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- EPITAXY; FABRICATION; FILMS; FISSION FRAGMENT DETECTION; ION DETECTION; SENSITIVITY; SI SEMICONDUCTOR DETECTORS; SILICON; TELESCOPE COUNTERS
- Descriptors DEC
- CHARGED PARTICLE DETECTION; ELEMENTS; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent