Published February 1977 | Version v1
Journal article

Thin epitaxial silicon for dE/dx detectors

  • 1. Los Alamos Scientific Lab., NM

Description

The techniques for fabricating thin self-supporting epitaxial films for dE/dx detectors have been studied. Detectors having thicknesses between 1 and 4 μm with areas of 12.5 mm2 have been fabricated and tested. The response of the detectors has been studied with alpha particles, oxygen ions, and fission fragments

Additional details

Identifiers

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
24
Journal Issue
1
Series
IEEE Trans. Nucl. Sci.
Journal Page Range
104-108
ISSN
0018-9499

Conference

Title
23. nuclear science symposium.
Dates
20 Oct 1976.
Place
New Orleans, LA, USA.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
8344076
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
EPITAXY; FABRICATION; FILMS; FISSION FRAGMENT DETECTION; ION DETECTION; SENSITIVITY; SI SEMICONDUCTOR DETECTORS; SILICON; TELESCOPE COUNTERS
Descriptors DEC
CHARGED PARTICLE DETECTION; ELEMENTS; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS

Optional Information

Notes
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