Published November 2009
| Version v1
Journal article
Evidence of non-local impact ionization in CNT and HgCdTe
Creators
- 1. Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ (United Kingdom)
Description
Two aspects of the non-local nature of impact ionization, dead space and resonance, are investigated. The very small excess noise factor measured for mercury cadmium telluride photodiodes can only be explained if the hole to electron ionization coefficient ratio, k, is very small and the impact ionization dead space is also considered. A maximum value of k for HgCdTe is estimated in this paper. In addition, recent measurements of the reverse photocurrent in single wall carbon nanotubes show a well defined flat region at a multiplication of 1.6. This is argued to be evidence for resonant behaviour in impact ionization for carbon nanotubes.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/193/1/012025Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 193
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 16. international conference on electron dynamics in semiconductors, optoelectronics and nanostructures
- Acronym
- EDISON 16
- Dates
- 24-28 Aug 2009
- Place
- Montpellier (France)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42029878
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM TELLURIDES; CARBON; ELECTRONS; HOLES; IONIZATION; MERCURY TELLURIDES; NANOTUBES; NOISE; PHOTODIODES; RESONANCE
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; MERCURY COMPOUNDS; NANOSTRUCTURES; NONMETALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TELLURIDES; TELLURIUM COMPOUNDS