Published November 2009 | Version v1
Journal article

Evidence of non-local impact ionization in CNT and HgCdTe

  • 1. Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ (United Kingdom)

Description

Two aspects of the non-local nature of impact ionization, dead space and resonance, are investigated. The very small excess noise factor measured for mercury cadmium telluride photodiodes can only be explained if the hole to electron ionization coefficient ratio, k, is very small and the impact ionization dead space is also considered. A maximum value of k for HgCdTe is estimated in this paper. In addition, recent measurements of the reverse photocurrent in single wall carbon nanotubes show a well defined flat region at a multiplication of 1.6. This is argued to be evidence for resonant behaviour in impact ionization for carbon nanotubes.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/193/1/012025

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
193
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
16. international conference on electron dynamics in semiconductors, optoelectronics and nanostructures
Acronym
EDISON 16
Dates
24-28 Aug 2009
Place
Montpellier (France)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42029878
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CADMIUM TELLURIDES; CARBON; ELECTRONS; HOLES; IONIZATION; MERCURY TELLURIDES; NANOTUBES; NOISE; PHOTODIODES; RESONANCE
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; MERCURY COMPOUNDS; NANOSTRUCTURES; NONMETALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TELLURIDES; TELLURIUM COMPOUNDS