Electronic transport properties of microcrystalline GaP

Electronic properties of microcrystalline gallium phosphide films deposited on fused silica substrates by plasma-enhanced atomic layer deposition at the temperature of 380°C were investigated. The values of the activation energy of conductivity (E_a = 0.247 eV), the optical value of the band gap (E_g = 2.2 eV) and the long-wavelength edge of photoconductivity (E_ph = 1.8 eV) were obtained for this material. The value of E_a could associated with position of Fermi level near to the bottom of the conduction band or barriers at the grain boundaries. The long-wavelength edge of photoconductivity in the layer of microcrystalline GaP is a consequence of the presence of interband states, which are associated with partially disordering. (paper)