Published February 2008
| Version v1
Journal article
Mechanism of acceptor impurity initiation in the TiCoSb intermetallic semiconductor heavily doped with a V donor impurity. 1. Studies of the crystal structure and the distribution of the electron density of states
Creators
- 1. Natsyional'nij unyiversitet 'L'vyivs'ka polyitekhnyika', L'vyiv (Ukraine)
- 2. Yinstitut prikladnikh problem mekhanyiki ta matematiki, L'vyiv (Ukraine)
- 3. L'vyivs'kij natsyional'nij Unyiversitet, L'vyiv (Ukraine)
- 4. Yinstitut fyizichnoyi khyimyiyi unyiversitetu, Vyiden'(Australia)
Description
Structural characteristics of the TiCoSb intermetallic semiconductor heavily doped with a donor V impurity have been studied, and the corresponding electron density of states (DOS) has been calculated. The numerical simulation of the investigated physical phenomena has been demonstrated to describe them adequately, if the variable occupation numbers of the atomic lattice sites the elementary cell of the compound are taken into account while constructing a Wigner-Seitz cell
Additional details
Additional titles
- Original title (Ukrainian)
- Mekhanyizm generatsyiyi aktseptornoyi domyishki v yintermetalyichnomu napyivprovyidniku TiCoSb pri sil'nomu leguvannyi donornoyu domyishkoyu V. 1. Doslyidzhennya strukturi ta rozpodyilu shchyil'nostyi elektronnikh stanyiv
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kyiv)
- Journal Volume
- 53
- Journal Issue
- no.2
- Journal Page Range
- p. 158-163
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 39095127
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTIMONY ALLOYS; COBALT ALLOYS; DILUTE ALLOYS; ELECTRON DENSITY; ELECTRONIC STRUCTURE; ENERGY LEVELS; INTERMETALLIC COMPOUNDS; SPECTRAL DENSITY; TITANIUM ALLOYS; VANADIUM ADDITIONS
- Descriptors DEC
- ALLOYS; FUNCTIONS; SPECTRAL FUNCTIONS; TRANSITION ELEMENT ALLOYS; VANADIUM ALLOYS