Impact of defects on the technology of highly integrated circuits

Crystal defects within the active regions of devices and defects in the gate oxide generally degrade performance and, hence, can cause significant yield losses in the fabrication of highly integrated circuits. Fast diffusing metal impurities, like Fe, Ni, and Cu that are primarily process-induced play frequently an important role in the formation and electrical activity of those defects. Main reasons for that behaviour, analytical techniques for metal detection and gettering techniques, that aim at the removal of metal impurities from active device regions, are discussed. (author) 41 refs., 12 figs