MBE growth of ZnMgCdS compounds on (001) GaAs for UV-A sensors

Zincblende ZnMgCdS quaternary alloy layers were grown by molecular beam epitaxy. The ZnMgCdS alloy could lattice match to GaAs and could exhibit the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Incorporation of Mg was more effective compared with Zn in the alloy. Stabilizing the substrate temperature especially at the initial growth stage was crucial to obtain high quality layers. The epilayer was applied to the metal-semiconductor-metal photodetector, and the rejection rate above 103 have bean achieved. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)