Detection and stability of nanoscale space charges in local oxidation nanolithography
Creators
- 1. Center for Nanostructured Materials and Analytics, Institute of Physics, Chemnitz University of Technology, Reichenhainer Straße 70, 09126 Chemnitz (Germany)
- 2. Department of Mathematics and Science and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Strasse 40, 34132 Kassel (Germany)
Description
We report on the stability of space charges within nanoscale silicon oxide patterns generated by atomic force microscope tip-induced local anodic oxidation of alkyl-terminated silicon. Surface potentials of these structures are investigated using two different approaches: Kelvin probe force microscopy and the spectroscopy of adsorbed charge-sensitive dye molecules. Both techniques prove that there is no decay of the space charge itself at least for several days. The apparent decrease of the surface potential measured with the Kelvin probe method is known to be influenced by the ambient humidity. It is supposed to be caused by a screening effect through the formation of a water layer. This is confirmed by our investigation of the surface potential decrease kinetics, which could be well fitted with an adapted model of water condensation. The fluorescence of the charge-sensitive dye di-4-ANEPPS, which is applied to the structures, shows a spectral shift of about 270 meV compared to an uncharged silicon oxide surface. The high stability of the charges supports the use of local anodic oxidation patterns as templates for selective immobilization of cationic species. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/23/9/095707Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 23
- Journal Issue
- 9
- Journal Page Range
- [7 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43105141
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; DETECTION; DYES; FLUORESCENCE; HUMIDITY; KINETICS; LAYERS; MILLI EV RANGE; NANOSTRUCTURES; OXIDATION; SILICON; SILICON OXIDES; SPACE CHARGE; SPECTRAL SHIFT; SPECTROSCOPY; STABILITY; SURFACE POTENTIAL; SURFACES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; ELEMENTS; EMISSION; ENERGY RANGE; LUMINESCENCE; MICROSCOPY; MOISTURE; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; POTENTIALS; SEMIMETALS; SILICON COMPOUNDS