Published January 15, 2011 | Version v1
Journal article

Ab initio calculation of ZnSiAs2 and CdSiAs2 semiconductor compounds

  • 1. Physics Department, Djillali Liabes University Of Sidi Bel-Abbes (Algeria)
  • 2. Applied Materials Laboratory, Electronics Department, Djillali Liabes University of Sidi Bel-Abbes (Algeria)
  • 3. Laboratoire de Physique Quantique et de Modelisation Mathematique (LPQ3M), Departement de Technologie, Universite de Mascara, 29000 (Algeria)
  • 4. Department of Physics and Astronomy, College of Science, King Saud University, P.O Box 2455, Riyadh 11451 (Saudi Arabia)
  • 5. Laboratoire de Modelisation et de Simulation en Sciences des Materiaux, Physics Department, Djillali Liabes University of Sidi Bel-Abbes (Algeria)
  • 6. Laboratory of Catalysis and Reactive Systems, Djillali Liabes University of Sidi Bel-Abbes (Algeria)

Description

In order to get a good overall description of the structural, electronic and optical properties of ternary chalcopyrite semiconductors especially for ZnSiAs2 and CdSiAs2, they have been calculated self consistently using the full potential augmented plane wave plus local orbital method (FPAPW+lo). The calculations are presented within the local density approximation (LDA), where we clarify the electronic and optical properties for both compounds. Since, we prove the existence of the direct band gap and also the efficiency of the method to give more details about the optical properties. We found that the most important features of the band gap is pseudo-direct for ZnSiAs2, and direct for CdSiAs2; then the contribution of the different transitions peaks are analyzed from the imaginary part of the dielectric function and the reflectivity spectra.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2010.10.024

Additional details

Identifiers

DOI
10.1016/j.physb.2010.10.024;
PII
S0921-4526(10)00957-9;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
406
Journal Issue
2
Journal Page Range
p. 169-176
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.