Ab initio calculation of ZnSiAs2 and CdSiAs2 semiconductor compounds
Creators
- 1. Physics Department, Djillali Liabes University Of Sidi Bel-Abbes (Algeria)
- 2. Applied Materials Laboratory, Electronics Department, Djillali Liabes University of Sidi Bel-Abbes (Algeria)
- 3. Laboratoire de Physique Quantique et de Modelisation Mathematique (LPQ3M), Departement de Technologie, Universite de Mascara, 29000 (Algeria)
- 4. Department of Physics and Astronomy, College of Science, King Saud University, P.O Box 2455, Riyadh 11451 (Saudi Arabia)
- 5. Laboratoire de Modelisation et de Simulation en Sciences des Materiaux, Physics Department, Djillali Liabes University of Sidi Bel-Abbes (Algeria)
- 6. Laboratory of Catalysis and Reactive Systems, Djillali Liabes University of Sidi Bel-Abbes (Algeria)
Description
In order to get a good overall description of the structural, electronic and optical properties of ternary chalcopyrite semiconductors especially for ZnSiAs2 and CdSiAs2, they have been calculated self consistently using the full potential augmented plane wave plus local orbital method (FPAPW+lo). The calculations are presented within the local density approximation (LDA), where we clarify the electronic and optical properties for both compounds. Since, we prove the existence of the direct band gap and also the efficiency of the method to give more details about the optical properties. We found that the most important features of the band gap is pseudo-direct for ZnSiAs2, and direct for CdSiAs2; then the contribution of the different transitions peaks are analyzed from the imaginary part of the dielectric function and the reflectivity spectra.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2010.10.024Additional details
Identifiers
- DOI
- 10.1016/j.physb.2010.10.024;
- PII
- S0921-4526(10)00957-9;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 406
- Journal Issue
- 2
- Journal Page Range
- p. 169-176
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42075507
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- APPROXIMATIONS; ARSENIC COMPOUNDS; CADMIUM COMPOUNDS; CHALCOPYRITE; COMPUTERIZED SIMULATION; CRYSTAL STRUCTURE; DENSITY; DIELECTRIC MATERIALS; EFFICIENCY; ELECTRICAL PROPERTIES; OPTICAL PROPERTIES; PNICTIDES; REFLECTIVITY; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SPECTRA; WAVE PROPAGATION; ZINC COMPOUNDS
- Descriptors DEC
- CALCULATION METHODS; MATERIALS; MINERALS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SIMULATION; SULFIDE MINERALS; SURFACE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.