Published 2016
| Version v1
Journal article
2.3 μ In Ga As Sb/Al Ga As Sb Quantum-Well Laser Diode via In As/Ga Sb Superlattice Layer on Ga As Substrate
Description
We present 2.3 μ In Ga As Sb/Al Ga As Sb type I laser diodes (LDs) on GaAs substrate; a superlattice (SL) layer was introduced as an interconnecting layer playing an important role in manipulating the optical field distribution and reducing free-carrier absorption in multi quantum wells (MQWs) for achieving balanced and optimal LDs performance. Accordingly, power of 8.6 m W was obtained with 2.3μ wavelength. Our results demonstrate that superlattice layer may open a new avenue for high performance and improvement in mid-infrared laser diode
Additional details
Publishing Information
- Journal Title
- Journal of Nanomaterials (Online)
- Journal Volume
- 2016
- Journal Issue
- 2016
- Journal Page Range
- 4 p.
- ISSN
- 1687-4129
INIS
- Country of Publication
- Egypt
- Country of Input or Organization
- Egypt
- INIS RN
- 48044385
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANTIMONY; GALLIUM; INDIUM; LASERS; OPTICAL FILTERS; OPTIMAL CONTROL; QUANTUM WELLS; SUPERLATTICES; WAVELENGTHS
- Descriptors DEC
- CONTROL; ELEMENTS; FILTERS; METALS; NANOSTRUCTURES