Published November 2017
| Version v1
Journal article
Ga2O3–In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity
- 1. Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Centre "Crystallography and Photonics," (Russian Federation)
Description
The structure and electrical and optical properties of β-Ga2O3–In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium–indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.
Additional details
Identifiers
Publishing Information
- Journal Title
- Crystallography Reports
- Journal Volume
- 62
- Journal Issue
- 6
- Journal Page Range
- p. 940-946
- ISSN
- 1063-7745
- CODEN
- CYSTE3
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50001185
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; GALLIUM; GALLIUM OXIDES; INDIUM; INDIUM OXIDES; MIXTURES; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; SAPPHIRE; SUBSTRATES; SYNTHESIS; THIN FILMS; ULTRAVIOLET RADIATION
- Descriptors DEC
- CHALCOGENIDES; CORUNDUM; DISPERSIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; METALS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS
Optional Information
- Copyright
- Copyright (c) 2017 Pleiades Publishing, Inc.