Published February 10, 1999 | Version v1
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The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

Creators

Description

Deep and shallow electron traps form in irradiated thermal SiO2 as a natural response to hole transport and trapping. The density and stability of these defects are discussed, as are their implications for total-dose modeling

Availability note (English)

Available from INIS in electronic form; Also available from OSTI as DE00003573; PURL: https://www.osti.gov/servlets/purl/3573-ICcd4Q/webviewable/

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Additional details

Identifiers

URL
https://www.osti.gov/servlets/purl/3573-ICcd4Q/webviewable/;

Publishing Information

Imprint Pagination
7 p.
Report number
SAND--99-0355C

Conference

Title
36. IEEE Annual International Nuclear and Space Radiation Effects Conference (NSREC)
Dates
12-16 Jul 1999
Place
Norfolk, VA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
32035035
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRON MOBILITY; HOLE MOBILITY; MATHEMATICAL MODELS; PHYSICAL RADIATION EFFECTS; POPULATION DENSITY; RADIATION DOSES; SILICON OXIDES; TRAPPING
Descriptors DEC
CHALCOGENIDES; DOSES; MOBILITY; OXIDES; OXYGEN COMPOUNDS; PARTICLE MOBILITY; RADIATION EFFECTS; SILICON COMPOUNDS

Optional Information

Contract/Grant/Project number
AC04-94AL85000
Funding organization
US Department of Energy (United States)