Absence of oxygen resputtering during on-axis single target depositions of Y-Ba-Cu-O thin films

This paper reports on stoichiometric thin films of YBa2Cu3O7-δ that have been deposited on (100) Silicon substrates by on-axis single target magnetron sputtering. The effect of oxygen resputtering was minimized through the use of much stronger than usual magnetic assemblies in the source. This allows for the use of lower operating voltages and a better electron racetrack confinement, resulting in little or no oxygen resputtering. The authors have obtained stoichiometric or near-stoichiometric films on silicon both by DC and RF magnetron techniques at a variety of sputtering pressures and target to substrate distances