Nd_2−xCe_xCuO_4−y/Nd_2−xCe_xO_y boundary and resistive switchings in mesoscopic structures on base of epitaxial Nd_1.86Ce_0.14CuO_4−y films

Highlights: • The CVCs of Nd_1.85Ce_0.15CuO_4−y heterocontacts with the buffer layer Nd_0.5Ce_0.5O_1.75 exhibited the resistive switchings. • Numerical simulation was used to consider the influence of field distribution in the heterocontact interface on switchings. • The spatial carrier inhomogeneities in the buffer layer NCO produce electric field influence on observed effects. - Abstract: Reverse and stable bipolar resistive switching effect (BRSE) was observed in planar Nd_2−xCe_x CuO_{4− y}/Nd_2−xCe_xO_x/Ag heterostructure. It was shown that the CVC of the BRSE observed has a diode character. Simulations were used to consider the influence of the nonuniform distribution of an electric field at the interface of a heterojunction on the effect of bipolar resistive switching in investigated structures. The inhomogeneous distribution of the electric field near the contact edge creates regions of higher electric field strength which, in turn, stimulates motion and redistribution of defects, changes of the resistive properties of the whole structure and formation of a percolation channel.