Published December 1, 2018
| Version v1
Journal article
High robustness of epitaxial 4H-SiC graphene to oxidation processes
- 1. Department of Physics, University of Crete, Heraklion, 71003 (Greece)
- 2. Research Institute for the Development of Scientific and Educational Potential of Youth, Aviatorov str. 14/55, Moscow, 119620 (Russian Federation)
- 3. Centre d'elaboration des Materiaux et d'etudes Structurales (CEMES), UPR-8011 CNRS, University of Toulouse, BP 94347, 31055, Toulouse (France)
- 4. Department of Physics, Chemistry and Biology, Linkoping University, SE-58183, Linkoping (Sweden)
- 5. Foundation for Research and Technology Hellas (FORTH), P.O. Box 1527, Vassilika Vuton, Heraklion, 71110, Crete, Hellas (Greece)
Description
We present an experimental prove of high robustness of epitaxial 4H-SiC graphene to oxidation processes. During a post-fabrication cleaning procedure we noticed that epitaxial graphene is extremely stable to ozone treatment. We analyse graphene properties using both electron transport measurements and numerical calculations. We ascribe this effect to the substrate topography, which significantly affects the graphene stability under UV/ozone treatment. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/1124/8/081020Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 1124
- Journal Issue
- 8
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 5. International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures
- Acronym
- Saint Petersburg OPEN 2018
- Dates
- 2-5 Apr 2018
- Place
- Saint Petersburg (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53021483
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRONS; EPITAXY; GRAPHENE; OXIDATION; OZONE; SILICON CARBIDES; SUBSTRATES
- Descriptors DEC
- CARBIDES; CARBON; CARBON COMPOUNDS; CHEMICAL REACTIONS; CRYSTAL GROWTH METHODS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; NONMETALS; SILICON COMPOUNDS