Published July 1, 2012 | Version v1
Journal article

Design and fabrication of an InP arrayed waveguide grating for monolithic PICs

  • 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Description

A 10-channel, 200 GHz channel spacing InP arrayed waveguide grating was designed, and the deep ridge waveguide design makes it polarization independent. Under the technologies of molecular beam epitaxy, lithography, and induced coupler plasma etching, the chip was fabricated in our laboratory. The test results show that the insertion loss is about −8 dB, and the crosstalk is less than −17 dB. (semiconductor devices)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/33/7/074010

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
33
Journal Issue
7
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43107843
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DESIGN; ETCHING; FABRICATION; GHZ RANGE 100-1000; GRATINGS; INDIUM PHOSPHIDES; LOSSES; MOLECULAR BEAM EPITAXY; PLASMA; POLARIZATION; SEMICONDUCTOR DEVICES; WAVEGUIDES
Descriptors DEC
CRYSTAL GROWTH METHODS; EPITAXY; FREQUENCY RANGE; GHZ RANGE; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SURFACE FINISHING