Published July 1, 2012
| Version v1
Journal article
Design and fabrication of an InP arrayed waveguide grating for monolithic PICs
- 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Description
A 10-channel, 200 GHz channel spacing InP arrayed waveguide grating was designed, and the deep ridge waveguide design makes it polarization independent. Under the technologies of molecular beam epitaxy, lithography, and induced coupler plasma etching, the chip was fabricated in our laboratory. The test results show that the insertion loss is about −8 dB, and the crosstalk is less than −17 dB. (semiconductor devices)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/33/7/074010Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 33
- Journal Issue
- 7
- Journal Page Range
- [4 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43107843
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DESIGN; ETCHING; FABRICATION; GHZ RANGE 100-1000; GRATINGS; INDIUM PHOSPHIDES; LOSSES; MOLECULAR BEAM EPITAXY; PLASMA; POLARIZATION; SEMICONDUCTOR DEVICES; WAVEGUIDES
- Descriptors DEC
- CRYSTAL GROWTH METHODS; EPITAXY; FREQUENCY RANGE; GHZ RANGE; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SURFACE FINISHING