Published October 1997
| Version v1
Journal article
Radiation-induced damage in GaAs particle detectors
- 1. Univ. of Glasgow (United Kingdom). Dept. of Physics and Astronomy
Description
The motivation for investigating the use of GaAs as a material for detecting particles in experiments for high-energy physics (HEP) arose from its perceived resistance to radiation damage. This is a vital requirement for detector materials that are to be used in experiments at future accelerators where the radiation environments would exclude all but the most radiation resistant of detector types
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 44
- Journal Issue
- 5
- Journal Page Range
- p. 1705-1707.
- ISSN
- 0018-9499
- CODEN
- IETNAE
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 29021449
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CHARGED PARTICLES; GALLIUM ARSENIDES; NEUTRONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BARYONS; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; HADRONS; MATERIALS; MEASURING INSTRUMENTS; NUCLEONS; PNICTIDES; RADIATION DETECTORS; RADIATION EFFECTS