Published 1985 | Version v1
Book Metadata-only

Modeling of two-phase CCDs with sub-micron gaps on InP substrates

Creators

  • 1. Solid State Electronics Lab., Dept. of Electrical and Computer Engineering, Univ. of Cincinnati, Cincinnati, Ohio 45221

Description

Charge coupling in InP is examined through the use of a computer model of charge-coupled devices (CCDs) based on the finite element method. A two-phase CCD structure with barrier implants and single-level insulated gates with sub-micron gaps is studied for buried channel devices on p-type InP. Static solutions to a system of partial differential equations are determined in two spatial dimensions for potentials, and a discussion on a limit to the gap size is presented. Signal charge profiles are shown, demonstrating charge spreading and maximum charge capacity

Additional details

Publishing Information

Publisher
The Electrochemical Society.
Imprint Place
Pennington, NJ (USA)
Imprint Title
Dielectric films on compound semiconductors
Journal Page Range
p. 47-58.

Conference

Title
168. meeting of the Electrochemical Society.
Dates
13-18 Oct 1985.
Place
Las Vegas, NV (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
17088946
Subject category
S42: ENGINEERING; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CAPACITY; CHANNELING; CHARGE DISTRIBUTION; CHARGE-COUPLED DEVICES; COMPUTER CALCULATIONS; COMPUTERIZED SIMULATION; DISTANCE; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; FINITE ELEMENT METHOD; GATING CIRCUITS; INDIUM PHOSPHIDES; MATHEMATICAL MODELS; P-TYPE CONDUCTORS; PARTIAL DIFFERENTIAL EQUATIONS; SIGNALS; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
DIFFERENTIAL EQUATIONS; ELECTRONIC CIRCUITS; EQUATIONS; INDIUM COMPOUNDS; MATERIALS; NUMERICAL SOLUTION; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SIMULATION