Published March 29, 2004 | Version v1
Journal article Metadata-only

Mature InAs quantum dots on the GaAs(114)A surface

Creators

  • 1. Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg, 4-6, D-14195 Berlin (Germany)

Description

InAs quantum dots (QDs), grown by molecular-beam epitaxy on GaAs(114)A surfaces, were studied in situ by atomically resolved scanning tunneling microscopy. At their mature stage, the QDs present a complicated but regular shape being bound by flat {110}, (111)A, and {2 5 11}A facets, and a steep part composed of rather variable combinations of {110}, (111)A, {1-bar1-bar1-bar}B, and {2 5 11} surfaces. The QD shape can be derived from mature InAs QDs on GaAs(001)

Additional details

Identifiers

DOI
10.1063/1.1691196;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
84
Journal Issue
13
Journal Page Range
p. 2283-2285
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36045057
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PNICTIDES

Optional Information

Notes
(c) 2004 American Institute of Physics.