Published August 2001 | Version v1
Journal article

Vibration modes of oxygen dimers in germanium

  • 1. Belarussian State University, Leningradskaya ul. 14, Minsk, 220050 (Belarus)
  • 2. Institute of Solid-State and Semiconductor Physics, Belarussian Academy of Sciences, ul. Brovki 17, Minsk, 220072 (Belarus)
  • 3. Lund University, Division of Solid-State Physics, S-22100 Lund (Sweden)

Description

Absorption in the infrared region of the spectrum was studied for both the as-grown Ge crystals and the Ge crystals irradiated with fast electrons (with subsequent heat treatment); the crystals were preliminarily enriched with 16O or 18O isotopes. The vibrational absorption bands observed in Ge and peaked at 780, 818, and 857 cm-1 are attributed to complexes composed of two atoms (dimers) of 16O, whereas the bands at 741, 776, and 811 cm-1 are attributed to complexes of 18O atoms. It is established that electron irradiation of Ge crystals at temperatures near 295 K with subsequent heat treatment at 120-250 deg. C brings about an increase in the intensities of bands peaked at 780 and 818 cm-1. The band peaked at 857 cm-1 does not change its intensity under irradiation and, by analogy with Si, is identified with another configuration of oxygen dimers in Ge. The bonding energy of dimers responsible for the bands peaked at 780 and 818 cm-1 is estimated at 0.35-0.4 eV

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
35
Journal Issue
8
Journal Page Range
p. 864-869
ISSN
1063-7826
CODEN
SMICES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 35, 900-905 (No. 8, 2001); (c) 2001 MAIK ''Nauka / Interperiodica''.