Published August 1988
| Version v1
Journal article
Sticking levels in CdIn2S4 single crystals
- 1. AN Azerbajdzhanskoj SSR, Baku. Inst. Fiziki
Description
Thermally induced conductivity (TIC) and temperature dependence of dark current (TDDC) in CdIn2S4 crystals are studied. These methods by comparatively simple experiments enable to discover in semiconductor energy gap sticking levels (SL) for basis carriers and local levels. CdIn2S4 monocrystals with a stoichiometric composition, cation deficiency as well as alloyed with Cu and Fe are studied. It is shown that for all studied specimens position of Tmax temperature, corresponding to TIC maximum, does not depend on initial exposure time, i.e. the degree of preliminry SL filling
Additional details
Additional titles
- Original title (Russian)
- Уровни прилипания в монокристаллах CdIn
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy
- Journal Volume
- 24
- Journal Issue
- 8
- Series
- Izv. Akad. Nauk SSSR, Neorg. Mater.
- Journal Page Range
- 1382-1385
- ISSN
- 0002-337X
- CODEN
- IVNMA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 20029104
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM SULFIDES; ENERGY GAP; INDIUM SULFIDES; MONOCRYSTALS; PHOTOCONDUCTIVITY; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; INDIUM COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; SULFIDES; SULFUR COMPOUNDS