Published November 1988 | Version v1
Journal article Metadata-only

Irradiation stimulated thermostabil electrically active defect generation in SiO2

Creators

  • 1. Moskovskij Gosudarstvennyj Univ., Moscow (USSR)

Description

Defect formation in Si-SiO2 structure oxide layer during irradiation with low-energy electrons and x ray within 104-5x109 rad dose range is studied. It is shown that as a result of radiation effects thermostable electrically active defects serving as neutral traps for electrons can be formed in oxide. Conditions for these defects generation are revealed. Possible mechanisms of their formation are discussed

Additional details

Additional titles

Original title (Russian)

Радиационно-стимулированная генерация термостабильных электрически активных дефектов в SiO2

Publishing Information

Journal Title
Mikroehlektronika
Journal Volume
17
Journal Issue
6
Series
Mikroehlektronika.
Journal Page Range
548-553
ISSN
0544-1269
CODEN
MKETA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
20050327
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CRYSTAL DEFECTS; ELECTRON BEAMS; INTERFACES; MEDIUM TEMPERATURE; MIS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; SILICON OXIDES; SURFACES; TEMPERATURE DEPENDENCE; TRAPS; ULTRAVIOLET RADIATION; X RADIATION
Descriptors DEC
BEAMS; CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; LEPTON BEAMS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; TRANSISTORS