Published December 1979 | Version v1
Journal article Metadata-only

On the determination of the threshold energy for atomic displacement in semi-conductors

Creators

  • 1. I.S.E.N., Lille (France). Lab. de Physique des Solides

Description

The assumption made when the threshold energy is measured using secondary defect production is discussed and shown to lead to a value higher than the exact one. (author)

Additional details

Publishing Information

Journal Title
Radiat. Eff. Lett.
Journal Volume
50
Journal Issue
1
Series
Radiat. Eff. Lett.
Journal Page Range
15-17
ISSN
0142-2448

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
11523711
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CRYSTAL DEFECTS; CRYSTAL LATTICES; DEFORMATION; ERRORS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; THRESHOLD ENERGY
Descriptors DEC
CRYSTAL STRUCTURE; ENERGY; RADIATION EFFECTS