Published September 23, 2016
| Version v1
Journal article
Topologically induced fractional Hall steps in the integer quantum Hall regime of MoS 2
Creators
- 1. National Institute of Science Education and Research, Bhubaneswar 751005 (India)
Description
The quantum magnetotransport properties of a monolayer of molybdenum disulfide are derived using linear response theory. In particular, the effect of topological terms on longitudinal and Hall conductivity is analyzed. The Hall conductivity exhibits fractional steps in the integer quantum Hall regime. Further complete spin and valley polarization of the longitudinal conductivitity is seen in presence of these topological terms. Finally, the Shubnikov-de Hass oscillations are suppressed or enhanced contingent on the sign of these topological terms. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/27/38/385203Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 27
- Journal Issue
- 38
- Journal Page Range
- [11 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50037652
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; HALL EFFECT; MOLYBDENUM SULFIDES; OSCILLATIONS; POLARIZATION
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; MOLYBDENUM COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS