Published September 23, 2016 | Version v1
Journal article

Topologically induced fractional Hall steps in the integer quantum Hall regime of MoS 2

  • 1. National Institute of Science Education and Research, Bhubaneswar 751005 (India)

Description

The quantum magnetotransport properties of a monolayer of molybdenum disulfide are derived using linear response theory. In particular, the effect of topological terms on longitudinal and Hall conductivity is analyzed. The Hall conductivity exhibits fractional steps in the integer quantum Hall regime. Further complete spin and valley polarization of the longitudinal conductivitity is seen in presence of these topological terms. Finally, the Shubnikov-de Hass oscillations are suppressed or enhanced contingent on the sign of these topological terms. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/27/38/385203

Additional details

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
27
Journal Issue
38
Journal Page Range
[11 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
50037652
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ELECTRIC CONDUCTIVITY; HALL EFFECT; MOLYBDENUM SULFIDES; OSCILLATIONS; POLARIZATION
Descriptors DEC
CHALCOGENIDES; ELECTRICAL PROPERTIES; MOLYBDENUM COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS