Published 1992 | Version v1
Miscellaneous

Peculiarities of defect accumulation beyond the ion projected range as a function of energy, irradiation dose and temperature

  • 1. Khar'kovskij Gosudarstvennyj Univ., Kharkov (Ukraine)
  • 2. Khar'kovskij Politekhnicheskij Inst., Kharkov (Ukraine)

Description

Precise X-ray diffractometry, transmission electron microscopy and ''in situ'' resistivity measurements in an implanter were used to study radiation damage in epitaxial Ti-films during 1 to 20 keV He+ implantation up to fluences of 5 · 1016 cm-2 in the temperature range from 100 K to 293 K. The kinetics of radiation defect accumulation were investigated both within the layer of projectile penetration range and beyond it

Part of:
Physics of radiation damage and radiation materials technology

Additional details

Additional titles

Original title (Russian)
Особенности накопления дефектов за пределами слоя проективных пробегов ионов в зависимости от энергии, дозы и температуры облучения

Publishing Information

Imprint Title
Physics of radiation damage and radiation materials technology
Imprint Pagination
150 p.
Journal Volume
1-2
Journal Issue
58-59
Series
Voprosy atomnoj nauki i tekhniki. Fizika radiatsionnykh povrezhdenij i radiatsionnoe materialovedenie.
Journal Page Range
p. 12-17.
ISSN
0134-5400
Report number
INIS-UA--006

Optional Information

Notes
Imprint:Fizika radiatsionnykh povrezhdenij i radiatsionnoe materialovedenie.