Depth dependence of localized mode absorptions in proton-implanted InP

Measurements of the depth profile of the radiation-induced damage density, the hydrogen concentration, and the integrated absorption of the localized infrared modes in proton-implanted InP single crystals are presented. The implanted layer was removed in steps by Ar+ sputtering determining the near surface damage density by Rutherford backscattering channeling using He+ ions, measuring the hydrogen concentration by particle induced gamma spectroscopy employing the reaction 1H(19F,αγ)16O, and the concentration of vibrating defects by the aid of absorbance spectra. Results allow to suppose tentatively that the mode at 2308 cm-1 in proton-implanted InP is due to vibrations of a defect consisting of a P atom bound to two H atoms located in neighbouring indium vacancies