Published December 2000
| Version v1
Book
Influence of neutron radiation on biased MOS structures
- 1. Dept. of Electrical Engineering, Indian Institute of Technology, Mumbai (India)
- 2. Solid State Physics Div., Bhabha Atomic Research Centre, Mumbai (India)
Description
It has been reported that neutrons can produce electronic damage in the gate oxides of MOS devices. In this work an attempt has been made to verify the same and therefore this work presents ionisation damage seen in MOS structures due to neutrons alone after accounting for the effects of associated gamma rays from neutron radiation process
Additional details
Publishing Information
- Publisher
- Bhabha Atomic Research Centre
- Imprint Place
- Mumbai (India)
- Imprint Title
- International symposium on nuclear physics. V. 43B
- Imprint Pagination
- 605 p.
- Journal Page Range
- p. 554-555
Conference
- Title
- International symposium on nuclear physics
- Dates
- 18-22 Dec 2000
- Place
- Mumbai (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 32063318
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COBALT 60; DAMAGING NEUTRON FLUENCE; ENERGY SPECTRA; GAMMA RADIATION; MOS TRANSISTORS; NEUTRON FLUX; NEUTRONS; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- BARYONS; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; HADRONS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; NEUTRON FLUENCE; NUCLEI; NUCLEONS; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIATION FLUX; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; SPECTRA; TRANSISTORS; YEARS LIVING RADIOISOTOPES
Optional Information
- Notes
- 5 refs., 4 figs.