Dispersion speed determination of thin metal and dielectric films

In progress of dispersing the complex multi-layer structures of the solid body materials by means of ions of the various elements the dispersion speed is usually determined for a single layer. The dispersion speeds of the remaining layers are obtained by usage of the calculation dispersion rates. However, these rates can considerably differ from the actual values due to the following reasons. In the given work by means of experiments the dispersion speeds were determined for the films of gold, silicon oxide and resist under influence of the argon ions with the energy of 3.5 keV. The difference was established of the calculated and experimentally determined rates, which is explained by the difference in the structure of the thin and amorphous films as compared with the crystal material. (authors)