Effects of electrostatic discharge on three cryogenic temperature sensor models
Creators
- 1. Lake Shore Cryotronics, 575 McCorkle Blvd., Westerville, OH 43082 (United States)
Description
Cryogenic temperature sensors are not usually thought of as electrostatic discharge (ESD) sensitive devices. However, the most common cryogenic thermometers in use today are thermally sensitive diodes or resistors - both electronic devices in their base form. As such, they are sensitive to ESD at some level above which either catastrophic or latent damage can occur. Instituting an ESD program for safe handling and installation of the sensor is costly and it is desirable to balance the risk of ESD damage against this cost. However, this risk cannot be evaluated without specific knowledge of the ESD vulnerability of the devices in question. This work examines three types of cryogenic temperature sensors for ESD sensitivity - silicon diodes, Cernox(trade mark, serif) resistors, and wire wound platinum resistors, all manufactured by Lake Shore Cryotronics, Inc. Testing was performed per TIA/EIA FOTP129 (Human Body Model). Damage was found to occur in the silicon diode sensors at discharge levels of 1,500 V. For Cernox(trade mark, serif) temperature sensors, damage was observed at 3,500 V. The platinum temperature sensors were not damaged by ESD exposure levels of 9,900 V. At the lower damage limit, both the silicon diode and the Cernox(trade mark, serif) temperature sensors showed relatively small calibration shifts of 1 to 3 K at room temperature. The diode sensors were stable with time and thermal cycling, but the long term stability of the Cernox(trade mark, serif) sensors was degraded. Catastrophic failure occurred at higher levels of ESD exposure
Additional details
Identifiers
- DOI
- 10.1063/1.4860691;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1573
- Journal Issue
- 1
- Journal Page Range
- p. 118-125
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- Cryogenic engineering conference
- Dates
- 17-21 Jun 2013
- Place
- Anchorage, AK (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45083945
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CALIBRATION; DAMAGE; ELECTRONIC EQUIPMENT; FAILURES; HAZARDS; INSTALLATION; PLATINUM; RESISTORS; SENSITIVITY; SENSORS; SILICON DIODES; TESTING; THERMAL CYCLING; THERMOMETERS
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; MEASURING INSTRUMENTS; METALS; PLATINUM METALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC