Published January 29, 2014 | Version v1
Journal article

Effects of electrostatic discharge on three cryogenic temperature sensor models

  • 1. Lake Shore Cryotronics, 575 McCorkle Blvd., Westerville, OH 43082 (United States)

Description

Cryogenic temperature sensors are not usually thought of as electrostatic discharge (ESD) sensitive devices. However, the most common cryogenic thermometers in use today are thermally sensitive diodes or resistors - both electronic devices in their base form. As such, they are sensitive to ESD at some level above which either catastrophic or latent damage can occur. Instituting an ESD program for safe handling and installation of the sensor is costly and it is desirable to balance the risk of ESD damage against this cost. However, this risk cannot be evaluated without specific knowledge of the ESD vulnerability of the devices in question. This work examines three types of cryogenic temperature sensors for ESD sensitivity - silicon diodes, Cernox(trade mark, serif) resistors, and wire wound platinum resistors, all manufactured by Lake Shore Cryotronics, Inc. Testing was performed per TIA/EIA FOTP129 (Human Body Model). Damage was found to occur in the silicon diode sensors at discharge levels of 1,500 V. For Cernox(trade mark, serif) temperature sensors, damage was observed at 3,500 V. The platinum temperature sensors were not damaged by ESD exposure levels of 9,900 V. At the lower damage limit, both the silicon diode and the Cernox(trade mark, serif) temperature sensors showed relatively small calibration shifts of 1 to 3 K at room temperature. The diode sensors were stable with time and thermal cycling, but the long term stability of the Cernox(trade mark, serif) sensors was degraded. Catastrophic failure occurred at higher levels of ESD exposure

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1573
Journal Issue
1
Journal Page Range
p. 118-125
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
Cryogenic engineering conference
Dates
17-21 Jun 2013
Place
Anchorage, AK (United States)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45083945
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CALIBRATION; DAMAGE; ELECTRONIC EQUIPMENT; FAILURES; HAZARDS; INSTALLATION; PLATINUM; RESISTORS; SENSITIVITY; SENSORS; SILICON DIODES; TESTING; THERMAL CYCLING; THERMOMETERS
Descriptors DEC
ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; MEASURING INSTRUMENTS; METALS; PLATINUM METALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TRANSITION ELEMENTS

Optional Information

Notes
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