Published June 2010 | Version v1
Journal article

XRD study on SixMn1-x diluted magnetic semiconductors prepared by ion implantation

  • 1. Accelerator Laboratory, School of Physics, Wuhan University, Wuhan (China)
  • 2. Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai (China)

Description

SixMn1-x diluted magnetic semiconductors (DMS) were prepared by implanting 200 keV Mn ions into p-Si (100) wafers and annealing them at 600 degree C,700 degree C, 800 degree C or 900 degree C under N2 atmosphere. The samples were studied by means of synchrotron radiation X-ray diffraction at SSRF (Shanghai Synchrotron Radiation Facility). It was found that the Mn implantation and thermal annealing resulted in appearance of silicon crystalline particles. At increasing annealing temperatures, the number of Mn atoms on interstitial sites decreased gradually while those on substitution sites increased. And the crystal lattice expanded, too. Interaction of Mn atoms between interstitial and substitution sites increased the ferromagnetism of SixMn1-x DMS samples. (authors)

Additional details

Publishing Information

Journal Title
Nuclear Techniques
Journal Volume
33
Journal Issue
6
Journal Page Range
p. 457-460
ISSN
0253-3219

Optional Information

Notes
5 figs., 1 tabs., 10 refs.