Published October 29, 2010
| Version v1
Journal article
Effect of two organic contamination modes on laser-induced damage of high reflective films in vacuum
- 1. Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Shanghai 201800 (China) and Department of Opto-Electronic Engineering, North University of China, Taiyuan 030051 (China) and Graduate School of Chinese Academy of Sciences, Beijing 100039 (China)
- 2. Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Shanghai 201800 (China)
Description
The impact of two organic contamination modes of toluene on the damage characteristics of a high reflective film (HR) at 1064 nm is investigated. The laser-induced damage modifications of HR films are locally analyzed by the Raman techniques, optical microscopy and scanning electron microscopy (SEM). It is found that liquid phase toluene decreases laser-induced damage threshold (LIDT) and gaseous phase toluene seems to be benign and increases the LIDT of the HR film. A possible damage mechanism is analyzed and discussed.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2010.08.016Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2010.08.016;
- PII
- S0040-6090(10)01131-4;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 519
- Journal Issue
- 1
- Journal Page Range
- p. 296-300
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42067215
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- LASERS; OPTICAL MICROSCOPY; REFLECTION; SCANNING ELECTRON MICROSCOPY; THIN FILMS; TOLUENE
- Descriptors DEC
- ALKYLATED AROMATICS; AROMATICS; ELECTRON MICROSCOPY; FILMS; HYDROCARBONS; MICROSCOPY; ORGANIC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.