Published 1980 | Version v1
Journal article

The structure of dislocations in quartz under electron irradiation

  • 1. Oxford Univ. (UK). Dept. of Geology and Mineralogy
  • 2. Imperial Coll. of Science and Technology, London (UK)

Description

It has been observed that, using the weak-beam technique, the images of a-type dislocations in quartz split into two peaks under electron beam irradiation at 100 KV, the peak separation increasing to about 250 A. This result was interpreted as the dissociation of the dislocations into two partials, which are able to reach their equilibrium separation as a result of enhanced mobility promoted by ionisation damage. To follow up these experiments specimens of naturally-deformed coarse-grained quartz from shear zones in the Cap de Creus area in N.E. Spain were examined. Experiments were carried out at room temperature and at elevated temperatures above the α-β transition at 5730C in 100 KV and 200 KV TEMs and at 800 KV in an HVEM. Radiation damage was minimised by using low levels of illumination and by setting up diffraction conditions away from the area of interest. Typical weak-beam conditions for g = brace 1 0 bar1 0 brace at 100 KV were (g, 9g) giving deviation parameters ssub(g) approximately 8 x 10-3 A-1 and w approximately 13. The conditions were not quite so favourable in the HVEM, but even so dislocation images approximately 20 A wide could be obtained and dynamic observations made using video recording and an image intensifier. The results are discussed. (author)

Additional details

Publishing Information

Journal Title
Micron
Journal Volume
11
Journal Issue
3-4
Series
Micron.
Journal Page Range
291-292
ISSN
0047-7206

Conference

Title
Electron microscopy 1980. Proceedings of the 6. Australian conference.
Dates
18 - 22 Feb 1980.
Place
Clayton, Australia.

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
11564981
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANGULAR DISTRIBUTION; CRYSTAL LATTICES; DISLOCATIONS; ELECTRON BEAMS; ELECTRON MICROSCOPY; IMAGE PROCESSING; PHYSICAL RADIATION EFFECTS; QUARTZ
Descriptors DEC
BEAMS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISTRIBUTION; LEPTON BEAMS; LINE DEFECTS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; RADIATION EFFECTS; SILICON COMPOUNDS; SILICON OXIDES