Perfect spin and valley polarized quantum transport in twisted SiC nanoribbons
Creators
- 1. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)
- 2. Department of Physics, Center for the Physics of Materials, McGill University, Montreal, Quebec H3A 2T8 (Canada)
- 3. State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan 030006 (China)
Description
The edge magnetism of zigzag SiC nanoribbons in its ground state is half-metallic, but is competed by a non-half-metal state that is energetically extremely close. In this work, we propose and theoretically analyze two-probe transport junctions that overcome this difficulty so that perfect half-metal quantum transport is realized. When two zigzag SiC nanoribbons are connected by a C–Si–C–Si tetramer where the right ribbon is turned by 180° around the transport direction, 100% spin polarization with nearly perfect transmission is obtained due to perfect momentum k -matching across the transport junction. We show such a transport to be independent of the magnetic configurations of the two ribbons. A concomitant property is that 100% valley polarized charge transport is achieved. In principle, the structure of the proposed transport junction turns SiC nanoribbons into a promising, robust, and essentially perfect spin and valley filter. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1583/aa598dAdditional details
Identifiers
Publishing Information
- Journal Title
- 2D Materials
- Journal Volume
- 4
- Journal Issue
- 2
- Journal Page Range
- [9 p.]
- ISSN
- 2053-1583
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50045427
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CHARGE TRANSPORT; ELECTRIC CONTACTS; FILTERS; GROUND STATES; MAGNETISM; NANOSTRUCTURES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDES; SPIN ORIENTATION
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; ELECTRICAL EQUIPMENT; ENERGY LEVELS; EQUIPMENT; ORIENTATION; SILICON COMPOUNDS