Published January 2008 | Version v1
Journal article Metadata-only

Compensation of native defects in PbTe and Pb1-xSnxTe

Creators

  • 1. V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv (Ukraine)

Description

Semi-insulation of the narrow-gap IV-VI semiconductor compounds PbTe and Pb1-xSn x Te used for infrared optoelectronic applications was investigated technologically and theoretically. Practically important cases in which the concentration of native defects greatly exceeds the intrinsic concentration of free carriers due to the growth conditions are discussed. In particular, doping conditions for the semi-insulation are determined for Cd, In and Ga compensating impurities. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from http://dx.doi.org/10.1002/pssb.200743122

Additional details

Identifiers

DOI
10.1002/pssb.200743122;

Publishing Information

Journal Title
Physica Status Solidi. B, Basic Research
Journal Volume
245
Journal Issue
1
Journal Page Range
p. 50-52
ISSN
0370-1972
CODEN
PSSBBD

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
39020276
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
CADMIUM ADDITIONS; CARRIER DENSITY; CRYSTAL DEFECTS; CRYSTAL GROWTH; DOPED MATERIALS; ELECTRON DENSITY; INDIUM ADDITIONS; LEAD TELLURIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0065-0273 K; THEORETICAL DATA; TIN TELLURIDES
Descriptors DEC
ALLOYS; CADMIUM ALLOYS; CHALCOGENIDES; CRYSTAL STRUCTURE; DATA; INDIUM ALLOYS; INFORMATION; LEAD COMPOUNDS; MATERIALS; NUMERICAL DATA; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE; TIN COMPOUNDS

Optional Information

Notes
With 2 figs., 18 refs.. SICI: 0370-1972(200801)245:1<50::AID-PSSB200743122>3.0.TX;2-Q