Published March 1981
| Version v1
Journal article
Atom probe analysis of rf-sputtered a-Si:H films
- 1. Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
Description
Using a computerized energy compensated time of flight atom probe (APFIM), we have obtained the average composition (Si,H,O) of two widely differing hydrogenated amorphous silicon rf-sputtered films which were deposited onto W field emitter tips. Analysis of the evaporated ion species shows that the films prepared at the lower total gas pressure (5 mTorr) contain predominantly SiH and Si units while at the higher pressure (20 mTorr) the additional units of SiH2 and SiH3 are also present. These results are compared to films prepared and characterized on planar substrates and found to be in agreement
Additional details
Publishing Information
- Journal Title
- J. Vac. Sci. Technol.
- Journal Volume
- 18
- Journal Issue
- 2
- Series
- J. Vac. Sci. Technol.
- Journal Page Range
- 309-312
- ISSN
- 0022-5355
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 12624517
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; FIELD EMISSION; FILMS; HIGH VACUUM; ION MICROSCOPY; SILANES; SOLAR CELLS; SPUTTERING; TIME-OF-FLIGHT METHOD; TUNGSTEN
- Descriptors DEC
- DIRECT ENERGY CONVERTERS; ELEMENTS; EMISSION; HYDRIDES; HYDROGEN COMPOUNDS; METALS; MICROSCOPY; SILICON COMPOUNDS; TRANSITION ELEMENTS