Published July 1993
| Version v1
Journal article
Laser shock waves induced diffusion processes in p-n junction structures
- 1. AN SSSR, Moscow (Russian Federation). Inst. Metallurgii
Description
Diffusion processes in p-n junction silicon structures due to laser shock wave effect is considered. The experimental results shows that laser shock wave initiates formation and diffusion of defects in p-n junction structures. P-n junction field and doping impurities make influence on the diffusion characteristics
Additional details
Additional titles
- Original title (Russian)
- Диффузионные процессы в структурах с п-н-переходом при действии лазерных ударных волн
Publishing Information
- Journal Title
- Fizika i Khimiya Obrabotki Materialov
- Journal Issue
- no.4
- Journal Page Range
- p. 14-17.
- ISSN
- 0015-3214
- CODEN
- FKOMAT
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 25051320
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; BORON ADDITIONS; DIFFUSION; DOPED MATERIALS; ELECTRIC POTENTIAL; LASER RADIATION; P-N JUNCTIONS; PHOSPHORUS ADDITIONS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SHOCK WAVES; SILICON; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; MATERIALS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; TEMPERATURE RANGE