Published August 15, 1985
| Version v1
Journal article
Radiation induced defects on Si-SiOsub(2) interface
Creators
- 1. Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Jaderna a Fysikalne Inzenyrska
Description
The density of surface states at Si-SiOsub(2) interface is examined for dry and wet oxidation process on <111> silicon substrate. The trivalent silicon centers are probably responsible for thermal and radiation generated surface states at the Si-SiOsub(2) interface. The dependence of the radiation induced surface state density is compared for various oxide thicknesses and for the oxidation methods used. (author)
Additional details
Publishing Information
- Journal Title
- J. Radioanal. Nucl. Chem.
- Journal Volume
- 95
- Journal Issue
- 4
- Series
- J. Radioanal. Nucl. Chem. ;Letters.
- Journal Page Range
- 257-262
- ISSN
- 0236-5731
INIS
- Country of Publication
- Hungary
- Country of Input or Organization
- Hungary
- INIS RN
- 16086314
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CESIUM 137; ENERGY LEVELS; INTERFACES; OXIDATION; OXYGEN; RADIATION DOSES; RADIATION EFFECTS; SILICON; SILICON OXIDES; THICKNESS; VACANCIES; VERY HIGH TEMPERATURE
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CESIUM ISOTOPES; CHALCOGENIDES; CHEMICAL REACTIONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; ELEMENTS; INTERMEDIATE MASS NUCLEI; ISOTOPES; NONMETALS; NUCLEI; ODD-EVEN NUCLEI; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; RADIOISOTOPES; SEMIMETALS; SILICON COMPOUNDS; YEARS LIVING RADIOISOTOPES
Optional Information
- Notes
- 6 refs.