Published 1976 | Version v1
Journal article Metadata-only

Photo-EPR experiments on defects in irradiated silicon

Creators

  • 1. State Univ. of New York, Albany (USA). Dept. of Physics

Description

The defect electrical levels for eight EPR spectra (Si-A10,-A14,-A15,-A16,-G7,-G16,-P2,-P4) are determined from optical bleaching experiments via electron paramagnetic resonance. The defect energy levels are located near the middle of the band gap in between Esub(c)- 0.40 eV and Esub(v) + 0.40 eV. (author)

Additional details

Identifiers

DOI
10.1080/00337577608233476;

Publishing Information

Journal Title
Radiation Effects
Journal Volume
29
Journal Issue
1
Series
Radiat. Eff.
Journal Page Range
7-12
ISSN
0033-7579

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
7262761
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BLEACHING; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE; ENERGY LEVELS; PHYSICAL RADIATION EFFECTS; SILICON; VISIBLE RADIATION
Descriptors DEC
CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; MAGNETIC RESONANCE; RADIATION EFFECTS; RADIATIONS; RESONANCE; SEMIMETALS

Optional Information

Notes
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