temperature Dependence of Material Parameters in Semiconductor Laser Based on InGaNAs/GaAs Quantum Well Systems
Creators
- 1. Kilis 7 Aralik University, Department of Physics, Faculty of Arts and Sciences, Kilis (Turkey)
Description
Lasing wavelength of semiconductor lasers changes greatly as a function of temperature, primarily due to the temperature-induced change in the band gap of active region. In this theoretical study, the temperature dependence of material parameters in long wavelength semiconductor lasers based on InGaNAs/GaAs quantum well systems are investigated. The bandgap and electron effective mass of InGaNAs quantum heterostructure are calculated by using a popular model based on band anti crossing (BAC) and the temperature dependence of these parameters are expressed by using Varshni's equation. We will also discuss the effects of temperature on the peak gain of InxGa1-x NyAs1-y /GaAs quantum well structures with various In (x) and N (y) concentrations
Additional details
Additional titles
- Original title (Turkish)
- Oezetler Kitabi
Publishing Information
- Imprint Title
- Book of Abstracts
- Imprint Pagination
- 764 p.
- Journal Page Range
- p. 492
- Report number
- INIS-TR--131
Conference
- Title
- 25. International Physics Congress of the Turkish Physical Society
- Original Conference Title
- Turk Fizik Dernegi 25. Uluslararasi Fizik Kongresi
- Dates
- 25-29 Aug 2008
- Place
- Bodrum (Turkey)
INIS
- Country of Publication
- Turkey
- Country of Input or Organization
- Turkey
- INIS RN
- 40109263
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- LASER RADIATION; QUANTUM WELLS; SEMICONDUCTOR LASERS; TEMPERATURE DEPENDENCE; WAVELENGTHS
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; LASERS; NANOSTRUCTURES; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS
Optional Information
- Notes
- Imprint:Oezetler Kitabi