High-performance chemical-bath deposited CdS thin-film transistors with ZrO2 gate dielectric

We demonstrate high performance chemical bath deposited CdS thin-film transistors (TFTs) using atomic layer deposited ZrO2 based high-k gate dielectric material. Our unique way of isolation of the CdS-based TFTs devices yielded significantly low leakage current as well as remarkable lower operating voltages (<5 V) which is four times smaller than the devices reported on CdS-based TFTs using SiO2 gate dielectric. Upon thermal annealing, the devices demonstrate even higher performance, including μFE exceeding 4 ± 0.2 cm2 V−1S−1, threshold voltage VT of 3.8 V, and Ion-off of 104–105, which hold much promise for applications in future electronic and optical devices