Published 1992
| Version v1
Book
Photoluminescence of erbium in amorphous silicon
Creators
- 1. FOM Inst. for Atomic and Molecular Physics, 1098 SJ Amsterdam (Netherlands)
Description
This paper reports on photoluminescence of erbium in ion-implanted amorphous Si has been observed after annealing at 400 degrees C. In addition, a broad band of luminescence attributed to intrinsic defects in amorphous Si is present. The background level steadily increases with increasing anneal temperature. The fluorescence lifetimes of either the Er or the background in all samples are ≤150 μsec
Additional details
Additional titles
- Subtitle (English)
- Structural relaxation and optical doping
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-129-8
- Imprint Title
- Proceedings of the phase formation and modification by beam-solid interactions
- Imprint Pagination
- 913 p.
- Journal Page Range
- p. 51-56.
Conference
- Title
- Annual fall meeting of the Materials Research Society.
- Dates
- 2-6 Dec 1991.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24010298
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; CRYSTAL DEFECTS; ERBIUM; ERBIUM ADDITIONS; ION IMPLANTATION; LIFETIME; PHOTOLUMINESCENCE; SILICON
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTS; EMISSION; HEAT TREATMENTS; LUMINESCENCE; METALS; PHOTON EMISSION; RARE EARTH ADDITIONS; RARE EARTHS; SEMIMETALS
Optional Information
- Secondary number(s)
- CONF-911202--.