Published 1990 | Version v1
Book Metadata-only

Electronic properties of diamond/nickel and diamond/boron nitride interfaces

Creators

  • 1. Complex Systems Theory Branch, Naval Research Lab., Washington, DC (USA)

Description

The authors present self-consistent local density functional calculations of the electronic structure and bonding characteristics of an ideal diamond/Ni (001) interface and an unrelaxed diamond/BN (110) interface. At this stage the small lattice mismatches are not taken into account. Results include predictions of the band line-ups across the interfaces: the Schottky barrier height in the former case and the valence and conduction band discontinuities in the latter case

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
1-55899-050-X
Imprint Title
Diamond, silicon carbide and related wide bandgap semiconductors
Imprint Pagination
627 p.
Journal Page Range
p. 35-41.

Conference

Title
Materials Research Society meeting on diamond, silicon carbide and related wide bandgap semiconductors.
Dates
27 Nov - 2 Dec 1989.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22054838
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BINDING ENERGY; BORON NITRIDES; DIAMONDS; ELECTRONIC STRUCTURE; INTERFACES; NICKEL
Descriptors DEC
BORON COMPOUNDS; CARBON; ELEMENTS; ENERGY; METALS; MINERALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; TRANSITION ELEMENTS

Optional Information

Secondary number(s)
CONF-8911168--.