Published October 29, 2003 | Version v1
Journal article

Ripening processes in supported and pinned nanoclusters - experiment, simulation and theory

  • 1. Department of Physics, University of Reading, Reading RG6 6AF (United Kingdom)

Description

We have investigated experimentally and theoretically the role that ripening processes play in the evolution of supported transition metal nanoclusters on solid surfaces. We discuss some avenues of analysis that can be more informative of the dominant mechanisms than mere temporal measures of island size. Our model system is formed by the growth of Pd nanoclusters at room temperature on the cross-linked (1 x 2) reconstructed TiO2(110) surface. The reconstructed surface contains a rectangular array of 'defects' that nucleate and pin the clusters. We have followed the surface evolution by variable temperature scanning tunnelling microscopy as the temperature was raised stepwise to 973 deg. K. We find that the ripening is dominated by an Ostwald-type mechanism with particles remaining immobile during growth (decay). Monte Carlo simulations of the ripening of arrays of three-dimensional islands have been undertaken for comparison with the experiments. These reproduce the spatial properties of the experimental arrays and the scaling nature of the height distribution. In addition the classic mean field theory for the size distribution is modified to include island size-separation correlations and is found to recover the size distribution found in both the simulation and the experiment. We conclude that detailed atomistic understanding of ripening is not always necessary to understand important features of nanostructure evolution

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/15/S3139/cm3_42_011.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
15
Journal Issue
42
Journal Page Range
p. S3139-S3152
ISSN
0953-8984
CODEN
JCOMEL